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FDMC86248 - N-Channel MOSFET

Description

This N Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance and yet maintain superior switching performance.

Features

  • Max RDS(on) = 90 mW at VGS = 10 V, ID = 3.4 A.
  • Max RDS(on) = 125 mW at VGS = 6 V, ID = 2.9 A.
  • Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency.
  • 100% UIL Tested.
  • Pb.
  • Free, Halide Free and RoHS Compliant.

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Datasheet Details

Part number FDMC86248
Manufacturer onsemi
File Size 412.42 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMC86248 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 150 V, 13 A, 90 mW FDMC86248 General Description This N−Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. Features • Max RDS(on) = 90 mW at VGS = 10 V, ID = 3.4 A • Max RDS(on) = 125 mW at VGS = 6 V, ID = 2.9 A • Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency • 100% UIL Tested • Pb−Free, Halide Free and RoHS Compliant Applications • Primary MOSFET • MV Synchronous Rectifier MAXIMUM RATINGS (TA = 25°C unless otherwise noted.
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