FDI150N10 - 100V 57A N-Channel MOSFET

ON Semiconductor

FDI150N10 Datasheet Preview — Preview of FDI150N10 PDF

Datasheet Details

Part number	FDI150N10
Manufacturer	ON Semiconductor ↗
File Size	327.41 KB
Description	100V 57A N-Channel MOSFET
Datasheet	FDI150N10-ONSemiconductor.pdf

FDI150N10 Product details

Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been tailored to minimize the on state resistance while maintaining superior switching performance.

Features

RDS(on) = 12 mW (Typ. ) @ VGS = 10 V, ID = 49 A.
Fast Switching Speed.
Low Gate Charge.
High Performance Trench Technology for Extremely Low RDS(on).
High Power and Current Handling Capability.
RoHS Compliant.

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Published: Aug 27, 2025 |