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FDH50N50 - N-Channel MOSFET

Description

family based on planar stripe and DMOS technology.

state resistance, and to provide better switching performance and higher avalanche energy strength.

Features

  • RDS(on) = 89 mW (Typ. ) @ VGS = 10 V, ID = 24 A.
  • Low Gate Charge (Typ. 105 nC).
  • Low Crss (Typ. 45 pF).
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet Details

Part number FDH50N50
Manufacturer onsemi
File Size 457.39 KB
Description N-Channel MOSFET
Datasheet download datasheet FDH50N50 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – N-Channel, UniFETt 500 V, 48 A, 105 mW FDH50N50, FDA50N50 Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Features • RDS(on) = 89 mW (Typ.) @ VGS = 10 V, ID = 24 A • Low Gate Charge (Typ. 105 nC) • Low Crss (Typ.
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