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FDH45N50F - N-Channel MOSFET

Description

on planar stripe and DMOS technology.

state resistance, and to provide better switching performance and higher avalanche energy strength.

Features

  • RDS(on) = 105 mW (Typ. ) @ VGS = 10 V, ID = 22.5 A.
  • Low Gate Charge (Typ. 105 nC).
  • Low Crss (Typ. 62 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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Datasheet Details

Part number FDH45N50F
Manufacturer onsemi
File Size 368.88 KB
Description N-Channel MOSFET
Datasheet download datasheet FDH45N50F Datasheet

Full PDF Text Transcription

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MOSFET – N-Channel, UniFETt, FRFET) 500 V, 45 A, 120 mW FDH45N50F Description UniFET MOSFET is onsemi’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET MOSFET has been enhanced by lifetime control. Its trr is less than 100 nsec and the reverse dv/dt immunity is 15 V/ns while normal planar MOSFETs have over 200 nsec and 4.5 V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant.
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