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FDD5810-F085 - N-Channel Logic Level Trench MOSFET

Datasheet Summary

Features

  • RDS(ON) = 22m: Typ. ), VGS = 5V, ID = 29A.
  • Qg(5) = 13nC (Typ. ), VGS = 5V.
  • Low Miller Charge.
  • Low Qrr Body Diode.
  • UIS Capability (Single Pulse / Repetitive Pulse).
  • Qualified to AEC Q101.
  • RoHS Compliant.
  • Motor / Body Load Control.
  • ABS Systems.
  • Powertrain Management.
  • Injection System.
  • DC-DC converters and Off-line UPS.
  • Distributed Power Architecture and VRMs.
  • Primary Switc.

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Datasheet Details

Part number FDD5810-F085
Manufacturer ON Semiconductor
File Size 282.84 KB
Description N-Channel Logic Level Trench MOSFET
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FDD5810-F085 N-Channel Logic Level Trench® MOSFET MPLEMENTATION FDD5810-F085 N-Channel Logic Level Trench®MOSFET 60V, 36A, 27m: Applications Features „ RDS(ON) = 22m: Typ.), VGS = 5V, ID = 29A „ Qg(5) = 13nC (Typ.), VGS = 5V „ Low Miller Charge „ Low Qrr Body Diode „ UIS Capability (Single Pulse / Repetitive Pulse) „ Qualified to AEC Q101 „ RoHS Compliant „ Motor / Body Load Control „ ABS Systems „ Powertrain Management „ Injection System „ DC-DC converters and Off-line UPS „ Distributed Power Architecture and VRMs „ Primary Switch for 12V and 24V systems AD FREE I LE D G S DTO-P-2A5K2 (TO-252) D G S ©2010 Semiconductor Components Industries, LLC. September-2017,Rev.
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