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FDD5690 - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

Features

  • • 30 A, 60 V. RDS(ON) = 0.027Ω @ VGS = 10 V RDS(ON) = 0.032 Ω @ VGS = 6 V. • Low gate charge (23nC typical). • Fast switching speed. • High performance trench technology for extremely low RDS(ON). D D G G S TO-252 Absolute Maximum Ratings TC=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current -Continuous (Note 1) (Note 1a) PD TJ, Tstg Maximum Drain Current -Pulsed Maximum Power Dissipation @ TC = 25oC TA = 25oC TA =.

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Datasheet Details

Part number FDD5690
Manufacturer ON Semiconductor
File Size 234.91 KB
Description N-Channel MOSFET
Datasheet download datasheet FDD5690 Datasheet
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Full PDF Text Transcription

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FDD5690 FDD5690 60V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 30 A, 60 V. RDS(ON) = 0.027Ω @ VGS = 10 V RDS(ON) = 0.032 Ω @ VGS = 6 V. • Low gate charge (23nC typical). • Fast switching speed. • High performance trench technology for extremely low RDS(ON).
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