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FDD5680 - N-Channel Power MOSFET

Datasheet Summary

Description

This N-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

DC/DC converter Motor drives

Features

  • 38 A, 60 V. RDS(on) = 0.021 Ω @ VGS = 10 V RDS(on) = 0.025 Ω @ VGS = 6 V.
  • Low gate charge (33nC typical).
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(on). D D G G S TO-252 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD TJ, Tstg Parameter Drain-Source Voltage Gate-Source Voltage Maximun Drain Current - Continuous (Note 1) (Note 1a) Maximum Drain Current - Pulsed Maximum Power Dis.

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Datasheet Details

Part number FDD5680
Manufacturer ON Semiconductor
File Size 431.81 KB
Description N-Channel Power MOSFET
Datasheet download datasheet FDD5680 Datasheet
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Full PDF Text Transcription

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FDD5680 March 2015 FDD5680 N-Channel, PowerTrench MOSFET General Description This N-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications • DC/DC converter • Motor drives Features • 38 A, 60 V. RDS(on) = 0.021 Ω @ VGS = 10 V RDS(on) = 0.025 Ω @ VGS = 6 V. • Low gate charge (33nC typical). • Fast switching speed. • High performance trench technology for extremely low RDS(on).
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