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FDD5670 - N-Channel Power MOSFET

Datasheet Summary

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low RDS( ON) and fast switching speed.

extremely low RDS(ON) in a small package.

Features

  • 52 A, 60 V RDS(ON) = 15 mΩ @ VGS = 10 V RDS(ON) = 18 mΩ @ VGS = 6 V.
  • Low gate charge.
  • Fast switching.
  • High performance trench technology for extremely low RDS(ON) D G S TO-252 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.
  • Pulsed Power Dissipation for Single Operation (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) TJ, T.

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Datasheet Details

Part number FDD5670
Manufacturer ON Semiconductor
File Size 256.07 KB
Description N-Channel Power MOSFET
Datasheet download datasheet FDD5670 Datasheet
Additional preview pages of the FDD5670 datasheet.

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Full PDF Text Transcription

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FDD5670 FDD5670 60V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. extremely low RDS(ON) in a small package.
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