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FDD5612 - N-Channel MOSFET

Description

This N

to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Features

  • 18 A, 60 V.
  • RDS(ON) = 55 mW @ VGS = 10 V.
  • RDS(ON) = 64 mW @ VGS = 6 V.
  • Optimized for Use in High Frequency DC/DC Converters.
  • Low Gade Charge.
  • Very Fast Switching.
  • This Device is Pb.
  • Free and are RoHS Compliant www. onsemi. com D G S G D S DPAK3 (TO.
  • 252 3 LD) CASE 369AS.

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Datasheet Details

Part number FDD5612
Manufacturer onsemi
File Size 441.03 KB
Description N-Channel MOSFET
Datasheet download datasheet FDD5612 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 60 V FDD5612 General Description This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 18 A, 60 V ♦ RDS(ON) = 55 mW @ VGS = 10 V ♦ RDS(ON) = 64 mW @ VGS = 6 V • Optimized for Use in High Frequency DC/DC Converters • Low Gade Charge • Very Fast Switching • This Device is Pb−Free and are RoHS Compliant www.onsemi.
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