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MOSFET – N-Channel, POWERTRENCH)
60 V, 50 A, 12.3 mW
FDD5353
General Description This N-Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Features
• Max RDS(on) = 12.3 mW at VGS = 10 V, ID = 10.7 A • Max RDS(on) = 15.4 mW at VGS = 4.5 V, ID = 9.5 A • 100% UIL Tested • This Device is Pb-Free, Halide Free and RoHS Compliant
Applications
• Inverter • Synchronous Rectifier • Primary Switch
MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDS
Drain to Source Voltage
60
V
VGS Gate to Source Voltage
±20
V
ID
Drain Current
A
−Continuous
TC = 25°C
50
−Continuous
TA = 25°C (Note 1a)
11.
FDD5353 Datasheet
