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FDD4243 - P-Channel MOSFET

Description

This P

proprietary POWERTRENCH technology to deliver low RDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications.

Features

  • Max RDS(on) = 44 mW at VGS =.
  • 10 V, ID =.
  • 6.7 A.
  • Max RDS(on) = 64 mW at VGS =.
  • 4.5 V, ID =.
  • 5.5 A.
  • High Performance Trench Technology for Extremely Low rDS(on).
  • Pb.
  • Free, Halide Free and RoHS Compliant.

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Datasheet Details

Part number FDD4243
Manufacturer onsemi
File Size 410.14 KB
Description P-Channel MOSFET
Datasheet download datasheet FDD4243 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
+ MOSFET – P-Channel, POWERTRENCH) -40 V, -14 A, 44 mW FDD4243, FDD4243-G General Description This P−Channel MOSFET has been produced using onsemi’s proprietary POWERTRENCH technology to deliver low RDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. Features • Max RDS(on) = 44 mW at VGS = −10 V, ID = −6.7 A • Max RDS(on) = 64 mW at VGS = −4.5 V, ID = −5.5 A • High Performance Trench Technology for Extremely Low rDS(on) • Pb−Free, Halide Free and RoHS Compliant ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise noted.
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