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FAN3217 - Low-Side Gate Drivers

Download the FAN3217 datasheet PDF. This datasheet also covers the FAN3216 variant, as both devices belong to the same low-side gate drivers family and are provided as variant models within a single manufacturer datasheet.

General Description

No Connect.

This pin can be grounded or left floating.

Input to Channel A.

Key Features

  • Industry.
  • Standard Pinouts.
  • 4.5 V to 18 V Operating Range.
  • 3 A Peak Sink/Source at VDD = 12 V.
  • 2.4 A Sink / 1.6 A Source at VOUT = 6 V.
  • Inverting Configuration (FAN3216) and Non.
  • Inverting Configuration (FAN3217).
  • Internal Resistors Turn Driver Off If No Inputs.
  • 12 ns / 9 ns Typical Rise/Fall Times (1 nF Load).
  • 20 ns Typical Propagation Delay Matched within 1 ns to the Other Channel.
  • TTL Input Thresho.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FAN3216-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number FAN3217
Manufacturer onsemi
File Size 954.50 KB
Description Low-Side Gate Drivers
Datasheet download datasheet FAN3217 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FAN3223 Low-Side Gate Drivers Fairchild Semiconductor
FAN3224 Low-Side Gate Drivers Fairchild Semiconductor
FAN3225 Low-Side Gate Drivers Fairchild Semiconductor
FAN3226 Low-Side Gate Drivers Fairchild Semiconductor
FAN3227 Low-Side Gate Drivers Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FAN3213 Low-Side Gate Drivers
FAN3214 Low-Side Gate Drivers
FAN3216 Low-Side Gate Drivers
FAN3223 Dual 4-A High-Speed Low-Side Gate Drivers
FAN3224 Dual 4-A High-Speed Low-Side Gate Drivers

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Dual 2-A High-Speed, Low-Side Gate Drivers FAN3216 / FAN3217 The FAN3216 and FAN3217 dual 2 A gate drivers are designed to drive N−channel enhancement−mode MOSFETs in low−side switching applications by providing high peak current pulses during the short sw itching intervals. They are both available with TTL input thresholds. Internal circuitry provides an under−voltage lockout function by holding the output LOW until the supply voltage is within the operating range. In addition, the drivers feature matched internal propagation delays between A and B channels for applications requiring dual gate drives with critical timing, such as synchronous rectifiers. This also enables connecting two drivers in parallel to effectively double the current capability driving a single MOSFET.