ECH8662 - N-Channel Power MOSFET

ON Semiconductor

Datasheet Details

Low ON-resistance.
2.5V drive.
Halogen free compliance.
Protection diode in Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on cera.

📁 ECH8662 Similar Datasheet

ECH8660 - N-Channel and P-Channel Silicon MOSFETs (Sanyo Semicon Device)
ECH8661 - N-Channel and P-Channel Silicon MOSFETs (Sanyo Semicon Device)
ECH8663R - N-Channel Silicon MOSFETs (Sanyo Semicon Device)
ECH8667 - P-Channel Silicon MOSFETs (Sanyo Semicon Device)
ECH8668 - N-Channel and P-Channel Silicon MOSFETs (Sanyo Semicon Device)
ECH8601 - General-Purpose Switching Device Applications (Sanyo Semicon Device)
ECH8601M - N-Channel Silicon MOSFET (Sanyo)
ECH8601R - N-Channel Silicon MOSFET (Sanyo Semicon Device)

Other Datasheets by ON Semiconductor

Published: Feb 7, 2016 |