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ECH8503 - Bipolar Transistor

Features

  • Composite type, facilitating high-density mounting.
  • Mounting height 0.9mm.
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature VCBO VCEO VEBO IC ICP IB PC PT Tj Storage Temperature Tstg Conditions When mounted on ceramic substr.

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Datasheet Details

Part number ECH8503
Manufacturer onsemi
File Size 215.86 KB
Description Bipolar Transistor
Datasheet download datasheet ECH8503 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1680A ECH8503 Bipolar Transistor –50V, –5A, Low VCE(sat) PNP Dual ECH8 http://onsemi.com Features • Composite type, facilitating high-density mounting • Mounting height 0.9mm • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature VCBO VCEO VEBO IC ICP IB PC PT Tj Storage Temperature Tstg Conditions When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Ratings -50 -50 -6 -5 -10 -1 1.3 1.
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