EB201D, EB201 High Cell Density MOSFET

ON Semiconductor

EB201D Description

www.DataSheet4U.com EB201/D High Cell Density MOSFETs Low On *Resistance Affords New Design Options Prepared by: Kim Gauen and Wayne Chavez ON.

EB201D Features

* 5.5 A. 3. Largest die available in a DPAK, RΘJC = 3.12°C/W, RΘCA = 50°C/W, Tamb = 85°C, Tboard = 125°C max. 4. Largest die available in a DPAK, RΘJC = 3.12°C/W, RΘCA = 50°C/W, Tamb = 85°C,

EB201D Applications

* may be able to move from larger to smaller packages, which cuts the cost of the package and decreases the required heatsink or circuit board area. A good example of this is the 14 mΩ TO
* 247. Until very recently, the only way to achieve such low on
* resistance was to build a large die

📥 Download Datasheet

EB201D Datasheet Preview — This datasheet PDF includes multiple part numbers: EB201D, EB201. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: EB201D, EB201
Manufacturer: ON Semiconductor ↗
File Size: 148.26 KB
Datasheet: EB201_ONSemiconductor.pdf
Description: High Cell Density MOSFET
Note: This datasheet PDF includes multiple part numbers: EB201D, EB201.
Please refer to the document for exact specifications by model.

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📌 All Tags

High Cell Density MOSFET ON Semiconductor

ON Semiconductor EB201D-like datasheet

EB201 - High Cell Density MOSFET