Datasheet4U.com

BUV21G, BUV21 - NPN Silicon Power Transistor

ON Semiconductor

📥 Download Datasheet

BUV21G Datasheet Preview — This datasheet PDF includes multiple part numbers: BUV21G, BUV21. Please refer to the document for exact specifications by model.

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	BUV21G, BUV21
Manufacturer	ON Semiconductor
File Size	108.83 KB
Description	NPN Silicon Power Transistor
Datasheet	BUV21_ONSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: BUV21G, BUV21. Please refer to the document for exact specifications by model.

BUV21G Product details

Features

High DC Current Gain: hFE min = 20 at IC = 12 A.
Low VCE(sat), VCE(sat) max = 0.6 V at IC = 8 A.
Very Fast Switching Times: TF max = 0.4 ms at IC = 25 A.
These are Pb.
Free Devices.

📁 BUV21G Similar Datasheet

BUV21 - 40 AMPERES NPN SILICON POWER METAL TRANSISTOR (Motorola Inc)
BUV20 - NPN Transistor (Motorola Inc)
BUV22 - 40 AMPERES NPN SILICON POWER METAL TRANSISTOR (Motorola Inc)
BUV23 - NPN Transistor (Motorola Inc)
BUV24 - Bipolar NPN Device (Seme LAB)
BUV25 - Bipolar NPN Device (Seme LAB)
BUV26 - MEDIUM POWER NPN SILICON TRANSISTOR (STMicroelectronics)
BUV26A - SILICON POWER TRANSISTOR (SavantIC)

Other Datasheets by ON Semiconductor

BUV27 - NPN Silicon Power Transistor
BUV11 - SITCHMODE Series NPN Silicon Power Transistor
BUV48 - SITCHMODE II Series NPN Silicon Power Transistors
BUV48A - SITCHMODE II Series NPN Silicon Power Transistors
BUV60 - SWITCHMODE Series NPN Silicon Power Transistor

Published: Apr 15, 2021 |