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BTA12-800BW3G - Triacs

Download the BTA12-800BW3G datasheet PDF. This datasheet also covers the BTA12-600BW3G variant, as both devices belong to the same triacs family and are provided as variant models within a single manufacturer datasheet.

Features

  • Blocking Voltage to 800 V.
  • On-State Current Rating of 12 A RMS at 25°C.
  • Uniform Gate Trigger Currents in Three Quadrants.
  • High Immunity to dV/dt.
  • 2000 V/ms minimum at 125°C.
  • Minimizes Snubber Networks for Protection.
  • Industry Standard TO-220AB Package.
  • High Commutating dI/dt.
  • 2.5 A/ms minimum at 125°C.
  • Internally Isolated (2500 VRMS).
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BTA12-600BW3G_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BTA12-600BW3G, BTA12-800BW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full−wave ac control applications where high noise immunity and high commutating di/dt are required. Features • Blocking Voltage to 800 V • On-State Current Rating of 12 A RMS at 25°C • Uniform Gate Trigger Currents in Three Quadrants • High Immunity to dV/dt − 2000 V/ms minimum at 125°C • Minimizes Snubber Networks for Protection • Industry Standard TO-220AB Package • High Commutating dI/dt − 2.