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N-Channel JFET Low-Frequency Low-Noise Amplifier
BSR57
• This device is designed for low−power chopper or switching
application sourced from process 51
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−Gate Voltage Gate−Source Voltage
VDGO VGSO
40
V
−40
V
Forward Gate Current
Total Power Dissipation Up to Tamb = 40°C
IGF
50
mA
Ptot
250
mW
Storage Temperature Range
TSTG
−55 to +150 °C
Junction Temperature
TJ
150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
DATA SHEET www.onsemi.com
3
1 2
SOT−23 CASE 318−08
STYLE 10
1. Drain 2. Source 3.
BSR57 Datasheet
