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BSP16T1G - High Voltage Transistors

Description

SOT 223 (TO

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

Features

  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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Datasheet Details

Part number BSP16T1G
Manufacturer onsemi
File Size 160.84 KB
Description High Voltage Transistors
Datasheet download datasheet BSP16T1G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Voltage Transistors PNP Silicon BSP16T1G Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25°C (Note 1) VCEO VCBO VEBO IC PD −300 −350 −6.0 −100 1.5 Vdc Vdc Vdc mAdc W Storage Temperature Range PD −65 to °C +150 Junction Temperature TJ THERMAL CHARACTERISTICS 150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 83.3 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1.
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