BS270 Datasheet (ON Semiconductor) - N-Channel Enhancement Mode Field Effect Transistor

BS270, N-Channel Enhancement Mode Field Effect Transistor

These N-Channel enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology.

These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

They can be used in most

BS270 Features

* 400mA, 60V. RDS(ON) = 2Ω @ VGS = 10V. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ________________________________________________________________________________ D Absolute Maximum Ratings Symbol Param