BDW42G - Darlington Complementary Silicon Power Transistors

ON Semiconductor

Datasheet Details

Part number	BDW42G
Manufacturer	ON Semiconductor
File Size	82.39 KB
Description	Darlington Complementary Silicon Power Transistors
Datasheet	BDW42G-ONSemiconductor.pdf

High DC Current Gain.
hFE = 2500 (typ) @ IC = 5.0 Adc.
Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(sus) = 80 Vdc (min).
BDW46 100 Vdc (min).
BDW42/BDW47.
Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc 3.0 Vdc (max) @ IC = 10.0 Adc.
Monolithic Construction with Built.
In Base Emitter Shunt resistors.
TO.
220 Compact Package.
These Devices are Pb.
Free.

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Published: Mar 2, 2017 |