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BBS3002 P-Channel Power MOSFET

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Description

Ordering number : ENA1357C BBS3002 P-Channel Power MOSFET *60V, *100A, 5.8mΩ, TO-263-2L/TO-263 http://onsemi.com .

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Features

* ON-resistance RDS(on)1=4.4mΩ (typ. )
* Input capacitance Ciss=13200pF (typ. )
* 4V drive TO-263 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Di

Applications

* and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,

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