BBL4001 - N-Channel Power MOSFET

ON Semiconductor

Datasheet Details

ON-resistance RDS(on)1=4.7mΩ(typ. ).
Input capacitance Ciss=6,900pF(typ. ).
4V drive Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Junction Temperature Tj Storage Temperature Tstg Avalanche Energy (Single Pulse).
1 EAS Avalanche Current.
2 IAV Note :.
1 VDD=30V, L=100μH, IAV=65A(Fig.1).

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Published: Jan 24, 2016 |