2SC4489 - Bipolar Transistor

ON Semiconductor

Datasheet Details

Adoption of FBET, MBIT processes.
Fast switching speed.
High breakdown voltage, large current capacity ( )2SA1709 Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Conditions Ratings (--)120 (--)100 (--)6 (--)2 (--)3 1 150 --.

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Published: Jun 10, 2015 |