2SC3647 - Bipolar Transistor

ON Semiconductor

Datasheet Details

Adoption of FBET, MBIT processes.
High breakdown voltage and large current capacity.
Fast switching speed.
Ultrasmall size making it easy to provide high-density small-sized hybrid ICs Speciﬁcations ( ) : 2SA1417 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperatur.

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Published: Jun 8, 2015 |