2SB1229 - PNP/NPN Epitaxial Planar Silicon Transistors

ON Semiconductor

Datasheet Details

Part number	2SB1229
Manufacturer	ON Semiconductor
File Size	97.47 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet	2SB1229-ONSemiconductor.pdf

Adoption of FBET, MBIT processes.
Large current capacity.
Low collector-to-emitter saturation voltage.
Fast switching time. Package Dimensions unit:mm 2003B [2SB1229/2SD1835] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 ( ) : 2SB1229 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Stor.

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Published: Jun 25, 2015 |