2SA2169 - Bipolar Transistor

ON Semiconductor

Datasheet Details

Adoption of MBIT processes.
Low collector-to-emitter saturation voltage.
Large current capacity.
High-speed switching Speciﬁcations ( ): 2SA2169 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP PW≤100μs Conditions Ratings (--50)100 (--)50 (--)6 (--)10 (--)13 Unit V V V A A Continued on next page. Packa.

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Published: Apr 1, 2016 |