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2N6517 - NPN Epitaxial Silicon Transistor

Features

  • High Voltage Transistor.
  • Collector Dissipation: PC(max) = 625 mW.
  • Complement to 2N6520.
  • Suffix “.
  • C” means Center Collector (1. Emitter 2. Collector 3. Base) 123 TO.
  • 92 3 4.825x4.76 CASE 135AN DATA SHEET www. onsemi. com 12 3 TO.
  • 92 3 4.83x4.76.

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Datasheet Details

Part number 2N6517
Manufacturer onsemi
File Size 225.24 KB
Description NPN Epitaxial Silicon Transistor
Datasheet download datasheet 2N6517 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NPN Epitaxial Silicon Transistor 2N6517 Features • High Voltage Transistor • Collector Dissipation: PC(max) = 625 mW • Complement to 2N6520 • Suffix “−C” means Center Collector (1. Emitter 2. Collector 3. Base) 123 TO−92 3 4.825x4.76 CASE 135AN DATA SHEET www.onsemi.com 12 3 TO−92 3 4.83x4.76 LEADFORMED CASE 135AR ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted.
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