2N6338 - High-Power NPN Silicon Transistors

onsemi

Datasheet Details

Part number	2N6338
Manufacturer	onsemi
File Size	190.50 KB
Description	High-Power NPN Silicon Transistors
Datasheet	2N6338 Datasheet

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Full PDF Text Transcription

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2N6338, 2N6341 High-Power NPN Silicon Transistors . . . designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) − 2N6338 = 150 Vdc (Min) − 2N6341 • High DC Current Gain − hFE = 30 − 120 @ IC = 10 Adc = 12 (Min) @ IC = 25 Adc • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc • Fast Switching Times @ IC = 10 Adc tr = 0.3 ms (Max) ts = 1.0 ms (Max) tf = 0.

Published: Dec 16, 2021 |