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2N6052 - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR

ON Semiconductor

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Datasheet Details

Part number	2N6052
Manufacturer	ON Semiconductor
File Size	132.01 KB
Description	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR
Datasheet	2N6052_ONSemiconductor.pdf

2N6052 Product details

Features

High DC Current Gain.
hFE = 3500 (Typ) @ IC = 5.0 Adc.
Collector.
Emitter Sustaining Voltage.
@ 100 mA VCEO(sus) = 100 Vdc (Min).
Monolithic Construction with Built.
In Base.
Emitter Shunt Resistors.
This is a Pb.
Free Device.

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Published: Mar 22, 2005 |