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MD56V62160 - 4-Bank x 1 /048 /576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM

General Description

The MD56V62160/H is a 4-bank 1,048,576-word

16-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology.

The device operates at 3.3 V.

The inputs and outputs are LVTTL compatible.

Key Features

  • Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell 4-bank.
  • 1,048,576-word.
  • 16-bit configuration 3.3 V power supply, ± 0.3 V tolerance Input : LVTTL compatible Output : LVTTL compatible Refresh : 4096 cycles/64 ms Programmable data transfer mode.
  • CAS latency (2, 3).
  • Burst length (2, 4, 8).
  • Data scramble (sequential, interleave).
  • CBR auto-refresh, Self-refresh capabil.

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Datasheet Details

Part number MD56V62160
Manufacturer OKI Electric
File Size 305.92 KB
Description 4-Bank x 1 /048 /576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
Datasheet download datasheet MD56V62160 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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E2G1052-17-X1 ¡ Semiconductor MD56V62160/H ¡ Semiconductor This version: Mar. 1998 MD56V62160/H Pr el im in ar y 4-Bank ¥ 1,048,576-Word ¥ 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MD56V62160/H is a 4-bank ¥ 1,048,576-word ¥ 16-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible. FEATURES • • • • • • • Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell 4-bank ¥ 1,048,576-word ¥ 16-bit configuration 3.3 V power supply, ± 0.