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NJG1812AMET-A HIGH POWER DPDT SWITCH GaAs MMIC

NJG1812AMET-A Description

Automotive NJG1812AMET-A HIGH POWER DPDT SWITCH GaAs MMIC * .
The NJG1812AMET-A is a GaAs DPDT switch MMIC suitable for antenna swapping of LTE/UMTS/CDMA/GSM applications.

NJG1812AMET-A Features

* AEC-Q100 grade 2 qualified
* Low voltage operation VDD = 2.7 V typ.
* Logic control voltage VCTL(H) = 1.35 to 5.0 V
* Low insertion loss 0.25 dB typ. @ f = 900 MHz, PIN = +35 dBm 0.35 dB typ. @ f = 1900 MHz, PIN = +33 dBm 0.45 dB typ. @ f = 2700 MHz, PIN = +27 dBm
* Low harmoni

NJG1812AMET-A Applications

* LTE, UMTS, CDMA, GSM systems
* BLOCK DIAGRAM (EQFN12-ET) (TOP VIEW) 1PIN INDEX GND P3 NC (GND) 12 11 10 VDD 1 9 P4 DECODER GND 2 8 NC (GND) VCTL 3 7 P1 4 5 6 GND P2 GND

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Datasheet Details

Part number
NJG1812AMET-A
Manufacturer
Nisshinbo
File Size
1.24 MB
Datasheet
NJG1812AMET-A-Nisshinbo.pdf
Description
HIGH POWER DPDT SWITCH GaAs MMIC

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HIGH POWER DPDT SWITCH GaAs MMIC Nisshinbo
Nisshinbo NJG1812AMET-A-like datasheet