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PE5B5DX - Dual P-Channel FET

Download the PE5B5DX datasheet PDF. This datasheet also covers the PE5B5DX-Niko variant, as both devices belong to the same dual p-channel fet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Pb.
  • Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PE5B5DX-Niko-Sem.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PE5B5DX
Manufacturer NIKO-SEM
File Size 324.60 KB
Description Dual P-Channel FET
Datasheet download datasheet PE5B5DX Datasheet

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Other Datasheets by NIKO-SEM

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PE5B7BA P-Channel Enhancement Mode Field Effect Transistor
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PE537BA P-Channel Logic Level Enhancement Mode Field Effect Transistor
PE552BA N-Channel Field Effect Transistor
PE5E6BA N-Channel Field Effect Transistor

Full PDF Text Transcription

Click to expand full text
NIKO-SEM Dual P-Channel Enhancement PE5B5DX Mode Field Effect Transistor PDFN 3x3P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 20mΩ ID -30A Features • Pb−Free, Halogen Free and RoHS compliant. • Low RDS(on) to Minimize Conduction Losses. • Ohmic Region Good RDS(on) Ratio. • Optimized Gate Charge to Minimize Switching Losses. Applications • Protection Circuits Applications. • Logic/Load Switch Circuits Applications. D1 D1 D2 D2 #1 S1 G1 S2 G2 G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current4 TC = 100 °C TA = 25 °C Pulsed Drain Current1 TA = 70 °C Avalanche Current Avalanche Energy L = 0.
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