P1004BD - N-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM

Download the P1004BD datasheet PDF. This datasheet also covers the P1004BD_Niko variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

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P1004BD n-channel enhancement mode field effect transistor by NIKO-SEM - Datasheet Preview — Note: The manufacturer provides a single datasheet file (P1004BD_Niko-Sem.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	P1004BD
Manufacturer	NIKO-SEM
File Size	515.75 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	P1004BD Datasheet

📁 Similar Datasheet

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P1004HV	N-Channel MOSFET	UNIKC
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Other Datasheets by NIKO-SEM

Part Number	Description
P1003BKA	N-Channel FET
P1006BD	N-Channel Enhancement Mode Field Effect Transistor
P1006BK	N-Channel MOSFET
P1006BT	N-Channel Transistor
P1006BTF	N-Channel Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P1004BD TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS 40V RDS(ON) 10mΩ ID 55A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range 2 1 SYMBOL VDS VGS LIMITS 40 ±20 55 44 120 38 73 50 32 -55 to 150 UNITS V V TC = 25 °C TC = 70 °C ID IDM IAS A L = 0.1mH TC = 25 °C TC = 70 °C EAS PD TJ, Tstg mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1 2 SYMBOL RθJA RθJC TYPICAL MAXIMUM 62.5 2.