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74C910 MM74C910

74C910 Description

MM54C910 MM74C910 256 Bit TRI-STATE Random Access Read Write Memory September 1989 MM54C910 MM74C910 256 Bit TRI-STATE Random Access Read Write Memo.
The MM54C910 MM74C910 is a 64 word by 4-bit random access memory Inputs consist of six address lines four data input lines a WE and a ME line The six.

74C910 Features

* Y Supply voltage range Y High noise immunity Y TTL compatible fan out Y Input address register Y Low power consumption Y Fast access time Y TRI-STATE outputs Y High voltage inputs 3 0V to 5 5V 0 45VCC (typ ) 1 TTL load 250 nW package (typ ) (chip enabled or disabled) 250 ns (typ ) at 5 0V Logic Di

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MM74C910 National Semiconductor
National Semiconductor 74C910-like datasheet