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2N5196 - N-Channel Monolithic Dual JFETs

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2N5196 Product details

Description

The 2N5196thru 2N5199 series of N-channel monolithic dual JFETs is designed for low to medium frequency differential amplifiers requiring low leakage and tight match.Absolute Maximum Ratings (25°o Gate-Drain or Gate-Source Voltage Gate Current Device Dissipation (Each Side), T/ = 85°C (Derate 2.56 mW/°C) -50V 50 mA 250 mW Total Device Dissipation, Ta = 85°C (Derate 4.3 mW/°C) 500 mW Storage Temperature Range Lead Temperature (1/16" from case for 10 seconds) 65°Cto+200°C a 300 C 0175- 0

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Other Datasheets by National Semiconductor
  • 2N5197 - N-Channel Monolithic Dual JFETs
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