N32T1630C1C - 32Mb Ultra-Low Power Asynchronous CMOS Pseudo SRAM

NanoAmp Solutions

N32T1630C1C Datasheet Preview — Preview of N32T1630C1C PDF

Datasheet Details

Part number	N32T1630C1C
Manufacturer	NanoAmp Solutions
File Size	362.36 KB
Description	32Mb Ultra-Low Power Asynchronous CMOS Pseudo SRAM
Datasheet	N32T1630C1C_NanoAmpSolutions.pdf

N32T1630C1C Product details

Description

Pin Name A0-A20 WE CE OE UB,LB ZZ I/O0-I/O15 VCC VCCQ VSS VSSQ DNU Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Byte Enable Inputs Deep Sleep Input Data Inputs/Outputs Core Power I/O Power Ground I/O Ground Do Not Use 2 OE UB I/O10 3 A0 A3 A5 A17 DNU/ VSS A14 A12 A9 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE I/O1 I/O3 I/O4 I/O5 WE A11 6 ZZ I/O0 I/O2 VCC VSS I/O6 I/O7 A20 VSSQ I/O11 VCCQ I/O12 I/O14 I/O13 I/O15 A18 A19 A8 48 Ball VFRBGA 6 x 8 mm (DOC# 1

Features

Dual voltage for Optimum Performance: VccQ - 2.7 to 3.6 Volts Vcc - 2.7 to 3.6 Volts (Vcc ≤ VccQ).
Fast random access time 70ns at 2.7V.
Very fast page mode access time 25ns page cycle and access.
Very low standby current 80µA V (Typical).
Very low operating current 1.0mA at 1µs (Typical).
Simple memory control Byte control for independent byte operation Output Enable (OE) for memory expansion.
Automatic power down to standby mode.

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