N08T1630CXB - 8Mb Ultra-Low Power Asynchronous CMOS SRAM

NanoAmp Solutions

N08T1630CXB Datasheet Preview — Preview of N08T1630CXB PDF

Datasheet Details

Part number	N08T1630CXB
Manufacturer	NanoAmp Solutions
File Size	282.80 KB
Description	8Mb Ultra-Low Power Asynchronous CMOS SRAM
Datasheet	N08T1630CXB_NanoAmpSolutions.pdf

N08T1630CXB Product details

Description

4 A1 A4 A6 A7 A16 A15 A13 A10 2 OE UB I/O10 I/O11 I/O12 3 A0 A3 A5 A17 VSS A14 A12 A9 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 6 CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC Pin Name A0-A18 WE CE1 CE2 OE LB UB I/O0-I/O15 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable 1 Input Chip Enable 2 Input (BGA only) Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Power Ground Not Connected A B C D E F G H LB I/O8 I/O9 VSS VCC 44 Pin TSOP2 I/O14 I/O

Features

Single Wide Power Supply Range 2.7 to 3.6 Volts.
Very low standby current 70µA at 3.0V (Max).
Very low operating current 2.0mA at 3.0V and 1µs (Typical).
Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion.
Very fast access time 55ns address access option 30ns OE access time.
Automatic power down to standby mode.
TTL compatible three-state output d.

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