N01L1618N1A Datasheet PDF - NanoAmp Solutions Ultra-Low Power Asynchronous CMOS SRAM Specs

N01L1618N1A - Ultra-Low Power Asynchronous CMOS SRAM

Datasheet Summary

Description

Pin Name A0-A15 WE CE OE LB UB I/O0-I/O15 NC VCC VSS Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Not Connected Power Ground N01L1618N1A TSOP I/O14 I/O13 I/O15 NC NC A8 48 Pin BGA (top) 6

Features

Single Wide Power Supply Range 1.65 to 2.2 Volts.
Very low standby current 0.5µA at 1.8V (Typical).
Very low operating current 0.7mA at 1.8V and 1µs (Typical).
Very low Page Mode operating current 0.5mA at 1.8V and 1µs (Typical).
Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE) for memory expansion.
Low voltage data retention Vcc = 1.2V.
Very fast output enable access time.

Datasheet Details

Part number	N01L1618N1A
Manufacturer	NanoAmp Solutions
File Size	252.67 KB
Description	Ultra-Low Power Asynchronous CMOS SRAM
Datasheet	N01L1618N1A Datasheet
Additional preview pages of the N01L1618N1A datasheet.

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Full PDF Text Transcription

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NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N01L1618N1A www.DataSheet4U.com 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K × 16 bit Overview The N01L1618N1A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 65,536 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently.

Published: Aug 17, 2010 |