EM512D16 - 512K x 16-Bit Ultra-Low Power Asynchronous SRAM

NanoAmp Solutions

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Datasheet Details

Part number	EM512D16
Manufacturer	NanoAmp Solutions
File Size	52.92 KB
Description	512K x 16-Bit Ultra-Low Power Asynchronous SRAM
Datasheet	EM512D16_NanoAmpSolutions.pdf

EM512D16 Product details

Description

Pin Name A0-A 18 WE CE1, CE2 OE UB LB I/O0-I/O 15 VCC VCCQ VSS NC Pin Function Address Inputs Write Enable Input Chip Enable Inputs Output Enable Input Upper Byte Enable Input Lower Byte Enable Input Data Inputs/Outputs Power Power I/O pins only Ground Not Connected FIGURE 1: Typical Operating Envelope (Serial R/W Mix) 12.5 10.0 Typical ICC (mA) 7.5 2.0 Volts 5.0 2.5 0.0 0 Stock No.23144-B 3/01 2.5 5.0 7.5 10.0 Operating Frequency (Mhz) 12.5 Advance - Subject to Change Without Notic

Features

Dual Voltage for Optimum Performance: Vccq - 2.3 to 3.6 Volts Vcc - 1.7 to 2.2 Volts.
Extended Temperature Range: -40 to +85 oC.
Fast Cycle Time: Random Access < 70 ns Page Mode < 25 ns.
Very Low Operating Current: ICC < 5 mA typical at 2V, 10 Mhz.
Very Low Standby Current: ISB < 2 uA @ 55 oC.
16 Word Fast Page-Mode Operation.
48-Pin BGA or Known Good Die available TABLE 1: Pin.

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