EM512D16 Datasheet (NanoAmp Solutions) - 512K x 16-Bit Ultra-Low Power Asynchronous SRAM

EM512D16, 512K x 16-Bit Ultra-Low Power Asynchronous SRAM

Pin Name A0-A 18 WE CE1, CE2 OE UB LB I/O0-I/O 15 VCC VCCQ VSS NC Pin Function Address Inputs Write Enable Input Chip Enable Inputs Output Enable Input Upper Byte Enable Input Lower Byte Enable Input Data Inputs/Outputs Power Power I/O pins only Ground Not Connected FIGURE 1: Typical Operating E

NanoAmp Solutions, Inc.

1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM512D16 Advance Information EM512D16 512Kx16 bit Ultra-Low Power Asynchronous Static RAM Overview The EM512D16 is an integrated memory device containing a low power 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits.

The base design is the same as NanoAmp’s standard low voltage version, EM512W16.

The device is fabricated using NanoAmp’s advanced CMOS process

EM512D16 Features

* Dual Voltage for Optimum Performance: Vccq - 2.3 to 3.6 Volts Vcc - 1.7 to 2.2 Volts

* Extended Temperature Range: -40 to +85 oC

* Fast Cycle Time: Random Access < 70 ns Page Mode < 25 ns

* Very Low Operating Current: ICC < 5 mA typical at 2V, 10 Mhz

* Very