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Naina Semiconductor Ltd.
Features
• • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM
MBR60020CT thru MBR60040CTR
Silicon Schottky Diode, 600A
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 100 oC TC = 25 oC tp = 8.3 ms Conditions MBR60020CT (R) 20 14 20 600 MBR60030CT MBR60035CT (R) (R) 30 21 30 600 35 25 35 600 MBR60040CT (R) 40 28 40 600 Units V V V A
IFSM
4000
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MBR60035CTR Datasheet
