RZ1214B35Y - NPN microwave power transistor

NXP

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Datasheet Details

Part number	RZ1214B35Y
Manufacturer	NXP ↗
File Size	69.53 KB
Description	NPN microwave power transistor
Datasheet	RZ1214B35Y_PhilipsSemiconductors.pdf

RZ1214B35Y Product details

Description

1 c b e DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange.Top view MAM314 Fig.1 Simplified outline and symbol.QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class-C wideband ampliﬁer.MODE OF OPERATION Class-C; tp = 150 µs; δ = 5% f (GHz) 1.2 to 1.4 VCC (V) 50 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide.The

Features

Interdigitated structure provides high emitter efficiency.
Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR.
Gold metallization realizes very stable characteristics and excellent lifetime.
Multicell geometry gives good balance of dissipated power and low thermal resistance.
Internal input matching ensures good stability and allows an easier design of wideband circuits.

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Published: Apr 16, 2005 |