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PVB42004X - NPN microwave power transistor

NXP

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Datasheet Details

Part number	PVB42004X
Manufacturer	NXP ↗
File Size	64.09 KB
Description	NPN microwave power transistor
Datasheet	PVB42004X_PhilipsSemiconductors.pdf

PVB42004X Product details

Description

1 APPLICATIONS Intended for use in common base class-B power amplifiers up to 4.2 GHz.

Features

Interdigitated structure provides high emitter efficiency.
Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
Local thick oxide and gold sandwich metallization realizes very stable characteristics and excellent lifetime.
Multicell geometry gives good balance of dissipated power and low thermal resistance. handbook, halfpage PVB42004X.

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Published: Apr 16, 2005 |