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PHP12N10E - PowerMOS transistor

Description

N-channel enhancement mode field-effect power transistor in a plastic envelope.

The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.

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Datasheet Details

Part number PHP12N10E
Manufacturer NXP Semiconductors
File Size 72.09 KB
Description PowerMOS transistor
Datasheet download datasheet PHP12N10E Datasheet
Additional preview pages of the PHP12N10E datasheet.

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Full PDF Text Transcription

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Philips Semiconductors Product Specification PowerMOS transistor PHP12N10E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. 100 14 75 175 0.
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