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PHB4ND40E - PowerMOS transistors FREDFET/ Avalanche energy rated

NXP

The PHB4ND40E by NXP is a PowerMOS transistors FREDFET/ Avalanche energy rated. Below is the official datasheet preview.

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PHB4ND40E PowerMOS transistors FREDFET/ Avalanche energy rated by NXP - Datasheet Preview — Official preview page of the PHB4ND40E PowerMOS transistors FREDFET/ Avalanche energy rated datasheet (NXP).

Datasheet Details

Part number	PHB4ND40E
Manufacturer	NXP
File Size	65.14 KB
Description	PowerMOS transistors FREDFET/ Avalanche energy rated
Datasheet	PHB4ND40E_PhilipsSemiconductors.pdf
Additional preview pages of the PHB4ND40E datasheet.

PHB4ND40E Product details

Description

N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED).

Features

Repetitive Avalanche Rated.
Fast switching.
Stable off-state characteristics.
High thermal cycling performance.
Low thermal resistance.
Fast reverse recovery diode PHP4ND40E, PHB4ND40E SYMBOL d QUICK.

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Published: Mar 22, 2005 |