PESD3V3S2UT - Double ESD protection diodes

NXP

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Datasheet Details

Part number	PESD3V3S2UT
Manufacturer	NXP
File Size	132.66 KB
Description	Double ESD protection diodes
Datasheet	PESD3V3S2UT-NXP.pdf

PESD3V3S2UT Product details

Description

cathode 1 cathode 2 common anode DESCRIPTION Uni-directional double ESD protection diodes in a SOT23 plastic package.Designed to protect up to two transmission or data lines from ElectroStatic Discharge (ESD) damage.MARKING TYPE NUMBER PESD3V3S2UT PESD5V2S2UT PESD12VS2UT PESD15VS2UT PESD24VS2UT MARKING CODE(1) U9 U1 U2 U3 U4 Note 1. = p : made in Hong Kong. = t : made in Malaysia. = W : made in China.

Features

Uni-directional ESD protection of up to two lines.
Max. peak pulse power: Ppp = 330 W at tp = 8/20 µs.
Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A.
Ultra-low reverse leakage current: IRM < 700 nA.
ESD protection > 23 kV.
IEC 61000-4-2; level 4 (ESD).
IEC 61000-4-5 (surge); Ipp = 18 A at tp = 8/20 µs.

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Published: Feb 18, 2016 |