Datasheet Details
| Part number | PDTA123E |
|---|---|
| Manufacturer | NXP |
| File Size | 186.93 KB |
| Description | PNP resistor-equipped transistors |
| Datasheet |
 PDTA123E_PhilipsSemiconductors.pdf
|
| Part number | PDTA123E |
|---|---|
| Manufacturer | NXP |
| File Size | 186.93 KB |
| Description | PNP resistor-equipped transistors |
| Datasheet |
PDTA123E_PhilipsSemiconductors.pdf
|
PDTA123E series QUICK REFERENCE DATA SYMBOL VCEO IO R1 R2 PARAMETER collector-emitter voltage output current (DC) bias resistor bias resistor TYP. 2.2 2.2 MAX. 50 100 UNIT V mA kΩ kΩ PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details).PRODUCT OVERVIEW PACKAGE TYPE NUMBER PHILIPS PDTA123EE PDTA123EEF PDTA123EK PDTA123EM PDTA123ES PDTA123ET PDTA123EU Note 1. = p: Made in Hong Kong.
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