PBSS8110T Datasheet (NXP) - NPN low VCEsat (BISS) transistor

PBSS8110T, NPN low VCEsat (BISS) transistor

NPN low VCEsat transistor in a SOT23 plastic package.

PNP complement: PBSS9110T.

MARKING TYPE NUMBER PBSS8110T Note 1.

∗ = p : Made in Hong Kong.

∗ = t : Made in Malaysia.

∗ = W : Made in China.

ORDERING INFORMATION TYPE NUMBER PBSS8110T PACKAGE NAME * DESCRIPTION plastic surface mounted pac

PBSS8110T Features

* SOT23 package

* Low collector-emitter saturation voltage VCEsat

* High collector current capability: IC and ICM

* Higher efficiency leading to less heat generation

* Reduced printed-circuit board requirements. APPLICATIONS

* Major application segment