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PBSS3515VS - PNP Transistor

NXP

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Datasheet Details

Part number	PBSS3515VS
Manufacturer	NXP
File Size	77.98 KB
Description	PNP Transistor
Datasheet	PBSS3515VS_PhilipsSemiconductors.pdf

PBSS3515VS Product details

Description

TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX. 15 1

Features

300 mW total power dissipation.
Very small 1.6 x 1.2 mm ultra thin package.
Self alignment during soldering due to straight leads.
Low collector-emitter saturation voltage.
High current capability.
Improved thermal behaviour due to flat leads.
Replaces two SC75/SC89 packaged low VCEsat transistors on same PCB area.
Reduces required PCB area.
Reduced pick and place costs.

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Published: Mar 22, 2005 |