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MW7IC2750NR1 - Power Amplifier

Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
  • On--Chip Matching (50 Ohm Input, DC Blocked).
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1).
  • Integrated ESD Protection.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
  • 225°C Capable Plastic Package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data Document Number: MW7IC2750N Rev. 4, 10/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2750N wideband integrated circuit is designed with on--chip matching that makes it usable from 2300 -- 2700 MHz. This multi -- stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. • Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 160 mA, IDQ2 = 550 mA, Pout = 8 Watts Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain — 26 dB Power Added Efficiency — 17% Device Output Signal PAR — 8.6 dB @ 0.01% Probability on CCDF ACPR @ 8.
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